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RF power transistor delivers 60MHz

Posted: 14 Jun 2011 ?? ?Print Version ?Bookmark and Share

Keywords:power transistor? wireless? base station?

NXP Semiconductors N.V. has launched its eighth generation (Gen8) laterally diffused metal oxide semiconductor (LDMOS) RF power transistors. The RF transistors are specifically designed for wireless base stations that are optimized to deliver signal bandwidths of up to 60MHz.

According to NXP, the RF power transistors provide I/O matching structures to enable affordable, wideband, compact, multistandard and highly-efficient Doherty power amplifiers.

The Gen8 LDMOS technology in the transistors allows them to deliver multiband and wideband power amplifiers and multimode base transceiver stations (BTS), but with a low-energy, cost-optimized footprint, the company said.

"NXP's Gen8 LDMOS offers base station OEMs low-cost, highly-efficient technology to manufacture multistandard, future-proof solutions with better production yields through tighter specifications for mass production," said Christophe Cugge, NXP director of marketing.

The higher bandwidth, more power and lower-cost propositions of the transistors make them more appealing to today's wireless infrastructure providers who are under pressure to bring cost-effective and power-efficient base stations to market quickly, NXP said.

The company noted that the pressure to lower operation costs is not only a concern of providers in emerging countries but also those in mature markets. The challenge, NXP said, is compounded by the multiplicity of cellular standards, frequency bands and network sharing requirements for rural deployments.

Compared to the previous generation, Gen8 increases power density by 15 percent and improves power efficiency by around 5 percent, depending on the application. It also allows peak power levels above 500W (P3dB) out of small and cost-effective SOT502-sized packages for peaking transistors. In addition, increased video bandwidth now allows full-band operation.

NXP's LDMOS technology used in RF power transistors typically runs at 28V to 32V and delivers performance up to 3.8GHz.

The transistors are being sampled for applications of up to 960MHz with excellent linearization capabilities, extreme ruggedness and efficiencies in excess of 55 percent for multicarrier GSM power amplifiers.

The Gen8 LDMOS transistors will be available starting the third quarter of this year.





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