28nm CMOS supports WLAN, Bluetooth

RFaxis Inc. launched its 28nm CMOS silicon multiband/multimode RF Front-end Integrated Circuit (RFeIC), designed for 2.4GHz and 5GHz frequency bands to support concurrent WLAN and Bluetooth operations. The deep submicron node product, branded the Nano-RFeIC, is process geometry agnostic, and thus can be designed and manufactured in 32-, 40/45-, 55/65nm and other commercially workable submicron CMOS nodes.

"This single die Nano-RFeIC comes complete with high efficiency linear power amplifiers that deliver state-of-the-art EVM power for transmit operations, low-noise amplifiers for high receive sensitivity, switching circuitry (TX/RX, mode and band switching, etc.), power detection, true directional couplers, coexistence and harmonic filters, impedance matching and CMOS logic control circuitry," said Oleksandr Gorbachov, CTO of RFaxis.

"By selecting the 28nm CMOS process node, we can help the ecosystem mitigate its current RF challenges and usher in a new generation of ultra low power mobile devices such smartphones, tablet PCs, mobile internet devices, as well as server-side devices such as consumer premises equipment. Because our products today already meet the demands of system-in-package (SiP) companies, our Nano-RFeIC products will also satisfy these SiP players. Moreover, our Nano-RFeIC products now completely bridge the RF gap for system-on-chip companies," added Mike Neshat, chair and CEO of RFaxis.

Sampling of the Nano-RFeIC begins in 4Q11.