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GaN FET geared for 1GHz CATV

Posted: 29 Jun 2011 ?? ?Print Version ?Bookmark and Share

Keywords:GaN FET? power amplifier?

Renesas Electronics Corp. has unveiled a gallium nitride field effect transistors (GaN FETs) power amplifier module for 1GHz band cable television (CATV) systems.

The power amplifier can be used in applications such as trunk amplifiers for CATVs. Renesas claims that the MC-7802 module offers low power consumption and improved output linearity and distortion characteristics.

The modules incorporates gallium nitride field effect transistors (GaN FETs) that Renesas believes can be operated at higher frequencies and deliver higher output power than its existing power amplifier module products that use gallium arsenide.

The module approximately doubles the output performance while maintaining current consumption and distortion performance, Renesas added. This is done by optimizing the matching circuits of the GaN FETs and other components for CATV applications.

As a result, manufacturers of CATV transmission equipment can roughly double output power without increasing current consumption, hence the coverage area of the CATV network overall can be expanded with no increase in power consumption, the company said.

It added that the GaN FETs are fabricated on a silicon substrate to simplify production using large-diameter wafers. The material typically used previously was made of silicon carbide.

Mass production for MC-7802 will begin this August, priced at $43 per unit.





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