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Biasing methods for amplifier and MMIC

Posted: 15 Aug 2011 ?? ?Print Version ?Bookmark and Share

Keywords:monolithic microwave integrated circuits? general purpose? amplifier?

GaAs monolithic microwave integrated circuits (MMICs) and general purpose amplifier (GPA) devices offered by Freescale Semiconductors are all designed to operate from a single positive voltage supply. The GPAs have output powers ranging from 15 to 33 dBm. They are currently designed with five different circuit techniques:
- Darlington Pair
- Pair with Active Bias
- Discrete with Diode Active Bias
- Discrete with integrated current mirror
- Field Effect Transistor (FET) operating at self bias

These devices also use three different device technologies:
- Indium Gallium Phosphide Heterostructure Bipolar Transistors (InGaP HBT)
- GaAs Heterostructure Field Effect Transistor (HFET)
- GaAs Enhancement Mode Pseudomorphic High Electron Mobility Transistors (EpHEMT)

This application note tackles the required biasing methods for the different circuit schemes.

View the PDF document for more information.

Originally published by Freescale Semiconductors at as "General Purpose Amplifier and MMIC Biasing".

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