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Development board features 200V eGaN FET

Posted: 19 Aug 2011 ?? ?Print Version ?Bookmark and Share

Keywords:development board? eGaN FET? gallium nitride?

Efficient Power Conversion Corp. (EPC) has unveiled the EPC9004, a 200V maximum input voltage, 2A maximum output current development board that allows users to design with EPC's 200V enhancement-mode gallium nitride (eGaN) FET. Applications include solar microinverters, class D audio amplifiers, Power over Ethernet (PoE) and synchronous rectification.

The development board can simplify the evaluation process of the EPC2012 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter, stated EPC. The EPC9004 measures 2 x 1.5in and contains two EPC2012 GaN FETs in a half bridge configuration with gate drivers, and an on-board gate drive supply and bypass capacitors. There are also various probe points to ease simple waveform measurement and efficiency calculation.

EPC9004 development boards are priced at $95 each, available for immediate delivery from Digi-Key.





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