Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Power/Alternative Energy
Power/Alternative Energy??

eGaN FETs feature superior dV/dt immunity

Posted: 22 Aug 2011 ?? ?Print Version ?Bookmark and Share

Keywords:eGAN FET? power transistor? dV/dt immunity?

Efficient Power Conversion Corp. (EPC) has expanded its line of second-generation enhancement mode gallium nitride (eGAN) FETs with the release of the 1.6mm2 EPC2012 that delivers 200VDS with a maximum RDS(ON)of 100m with five volts applied to the gate.

The eGaN FET provides significant performance advantages over the first-generation EPC1012 eGaN device, EPC stated. The EPC2012, with an increased pulsed current rating of 15A (compared with 12A for the EPC1012), is fully enhanced at a lower gate voltage and has superior dV/dt immunity due to an improved QGD/QGS ratio, EPC stated.

Compared to a modern power MOSFET with similar on-resistance, the EPC2012 is much smaller and offers high frequency switching, the company claimed. Applications include high-speed DC/DC power supplies, point-of-load converters, class D audio amplifiers, and hard-switched and high frequency circuits.


The EPC1012 family is lead-free, RoHS-compliant and halogen-free. Available in 1,000-piece quantities, the EPC2012 is priced at $2.10.

Article Comments - eGaN FETs feature superior dV/dt imm...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top