Wafer inspection tool targets 20nm device nodes

KLA-Tencor Corp. has introduced an enabling tool for chip manufacturing at the 20nm device nodes and below—the eDR-7000 e-beam wafer defect review system. Featuring technology that produce high sensitivity and throughput, the eDR-7000 targets defect imaging and classification challenges at today's leading edge, where yield-killing defects can be as small as 10nm, or located at the bottom of a deep trench or hole.

The eDR-7000 can identify defects down to the sensitivity thresholds of wafer defect inspection systems designed for the 20nm node. These include the Surfscan SP3, which was introduced last month, and KLA-Tencor's upcoming models in the patterned wafer inspection product lines.

The leading-edge capabilities of the eDR-7000 are enabled by a third-generation, field-tested e-beam immersion column, for higher resolution and improved topographic imaging. The device also has advanced stage and vibration-isolation system, for a three-fold improvement in coordinate accuracy and up to a four-fold increase in defect review speed. The eDR-7000 has improved sensitivity to defects on bare wafers, including enhancements to energy-dispersive x-ray (EDX) composition analysis. The device's reticle defect review mode enables rapid investigation of sites on the wafer where reticle defects may have printed.

The eDR-7000 also has a process window characterization at significantly greater throughput. Its voltage-contrast imaging mode can be used to review of e-beam wafer inspection data. Its offline defect classification capability increases the tool's availability for imaging work.