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IGBTs feature 20每50A current range

Posted: 07 Sep 2011 ?? ?Print Version ?Bookmark and Share

Keywords:IGBT? power density? conduction loss?

International Rectifier Corp. (IR) has unveiled a line of 1200V insulated gate bipolar transistors (IGBTs) that boast current range of 20每50A as packaged devices and up to 150A for die products. The IRG7PH35UPBF can be used in induction heating, uninterruptible power supplies (UPS), solar and welding applications.

IRG7PH35UPBF

The IRG7PH35UPBF can be used in induction heating, uninterruptible power supplies (UPS), solar and welding applications.

The IGBTs use thin wafer Field-Stop Trench technology that reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies. These devices also complement IR's products with 10?s short circuit capability for motor drive applications.

IR said the IGBTs offer key performance benefits such as wide square reverse bias safe operating area, positive VCE(on) temperature coefficient, and low VCE(on) to reduce power dissipation and achieve higher power density. They are also available with or without an internal ultra-fast soft recovery diode. Die products are also on offer with solderable front metal for improved thermal performance, reliability and efficiency.

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