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GaN-on-Si tech touts 114 years MTTF at 230C

Posted: 23 Nov 2011 ?? ?Print Version ?Bookmark and Share

Keywords:GaN-on-Si? process platform? RF application?

Nitronex Corp. has unveiled the NRF2, a 48V GaN-on-Si process platform that has twice the power density and 1-2dB higher gain than the company's 28V NRF1 process technology. In addition, the company said it has better broadband performance, and higher breakdown and supply voltage operation than the NRF1.

The technology increases reliability for GaN-on-Si with more than one million hours (114 years) mean time to failure (MTTF) at an operating junction temperature of 230C using 10 percent drift failure criteria, said Nitronex. The improvements in thermal management in initial 48V products have shown thermal resistance reduction of more than 40 percent compared to existing Nitronex products, added the company.


The NRF2 features twice the power density and 1-2dB higher gain than NRF1.

"A robust and reliable high voltage process can deliver superior performance in high-power RF applications," noted Ray Crampton, VP of engineering at Nitronex. "In addition to increased reliability and RF performance, we have demonstrated robustness to 15:1 output VSWR at all angles at 90C flange temperature under saturated drive conditions."

Nitronex's patented SIGANTIC GaN-on-Si process is the only production-qualified GaN process using an industry standard 4in silicon substrate, claimed the company. It continued by saying that the company is poised for growth expected from emerging GaN markets such as military communications, CATV, RADAR, commercial wireless, satellite communications and point to point microwave. Initial 48V samples are available with pre-production and production quantities available early next year.

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