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Metallization firing system touts 200C/s ramp rate

Posted: 20 Dec 2011 ?? ?Print Version ?Bookmark and Share

Keywords:metallization firing? wafer breakage?

BTU International Inc. has released its TRITAN HV90 dual-lane metallization firing system. The company has claimed that it surpasses industry standards for wafer breakage and metallization firing. The three-speed system boasts a yield better than 99.99 percent, BTU added.

"The HV90's three-belt TriSpeed system optimizes the thermal profile providing our customers a unique advantage to improve fill factor and cell efficiency," noted Bob Bouchard, product marketing manager for metallization products at BTU. "In an extensive field test comprised of over one year of full production, the TRITAN HV90 had a breakage rate of less than 0.01 percent, less than half of the industry standard of 0.02 percent."


The system boasts more than 99.99 percent yield.

The TRITAN HV90 dual-lane metallization firing system features increased throughput at 3600 wafers per hour, an edge belt, volatile organic compound (VOC) abatement and a single zone spike with less than three seconds spike time. The TRITAN metallization firing system features BTU's TriSpeed technology, allowing users to take advantage of superior ramp ratesup to 200C/swhile not compromising the drying and cooling sections of the profile. In trials, TRITAN has consistently shown an improvement in fill factor, resulting in increased efficiency, stated BTU.

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