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Soitec, Sumitomo demo 'smart-cut' GaN wafers

Posted: 26 Jan 2012 ?? ?Print Version ?Bookmark and Share

Keywords:GaN? LED? power transistors?

Semiconductor manufacturing materials vendors Soitec SA and Sumitomo Electric Industries Ltd have announced that they have demonstrated four- and six-inch diameter engineered gallium nitride (GaN) wafer substrates. The two companies began a joint development on GaN in December 2010.

The substrates are produced by transferring ultra-thin high quality GaN layers from a single GaN wafer to produce multiple engineered GaN substrates. These substrates are suitable for the manufacture of light-emitting diodes (LEDs) and power transistors.

Having demonstrated the scaling of the technology the companies are now investing in pilot production lines in Itami, Japan and Bernin, France. The pilot lines will initially fabricate four-inch wafers.

Under the partnership to France, where Soitec will apply its "smart-cut" layer-transfer process to generate the engineered wafers. The resulting Sumitomo Electric will manufacture bulk GaN substrates in Japan for shipment wafers have low defect density, enabling the manufacturing of advanced semiconductor devices at lower costs than bulk GaN wafers.

- Peter Clarke
??EE Times





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