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SiC MOSFETs target high frequency apps

Posted: 31 Jan 2012 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? silicon carbide? Schottky diode?

Powerex Semiconductor Solutions has announced a couple of split dual SiC MOSFET modules that according to the company are created with low profile and multiple circuit topologies. Additionally, the QJD1210010 and QJD1210011 are engineered for high frequency applications.

Each module consists of two MOSFET silicon carbide transistors, with each transistor having a reverse-connected Zero Recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management, stated Powerex.

QJD1210010/11

The SiC MOSFETs feature -175C junction temperature.

Rated at 100A/1200V, QJD1210010 and QJD1210011 feature -175C junction temperature. The company said the devices offer low internal inductance, high speed switching, low switching losses, low capacitance and high power density. The QJD1210010 has a Copper baseplate for extended thermal cycle life while the QJD1210011 has an AlSiC baseplate.

The MOSFET modules can be used in high frequency applications including energy saving power systems such as fans, pumps and consumer appliances; high frequency type power systems such as UPS, high speed motor drives, induction heating, welding and robotics; and high temperature power systems such as power electronics in electric vehicle and aviation systems.





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