Gate driver features 7.6A peak turn-off current

Texas Instruments Inc. (TI) has rolled a gate driver for MOSFETs and gallium nitride (GaN) power field-effect transistors (FETs) in high-density power converters. The LM5114 drives GaN FETs and MOSFETs in low-side applications including synchronous rectifiers and power factor converters. Other applications are high-performance telecommunication, networking and data centers.

The LM5114 drives both standard MOSFETs and GaN FETs by using independent sink and source outputs from a 5V supply voltage. It features a high 7.6A peak turn-off current capability needed in high-power applications where larger or paralleled FETs are used. The increased pull-down strength also enables it to drive GaN FETs properly. The independent source and sink outputs eliminate the need for a diode in the driver path and allows tight control of the rise and fall times.

The device operated from 4-12.6V in a single power supply and features 0.23? open-drain, pull-down, sink output that prevents unintended turn on. Its matching delay time between inverting and non-inverting inputs reduces dead time losses, added TI. The 12ns typical propagation delay enables high switching frequency while maintaining improved efficiency. In addition, it boasts up to 14V logic inputs and works from -40°C to 125°C.

The LM5114 is available in volume from TI in a 6-pin SOT-23 package and 6-pin LLP package with exposed pad. The suggested retail price is $0.58 in 1,000-unit quantities.