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2Gb, 4Gb DDR3Lm for tablets, ultrathin devices

Posted: 14 Feb 2012 ?? ?Print Version ?Bookmark and Share

Keywords:DDR3? tablet? ultrathin markets?

Micron Technology Inc.�has unleashed a new product category of low-power DDR3 solutions engineered for the tablet and ultrathin markets. The 2Gb and 4Gb 'DDR3Lm' solutions deliver low self-refresh power (IDD6) for longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM, stated the company.

The 2Gb DDR3Lm offers up to 50 percent self-refresh power savings versus standard 2Gb DDR3L while driving performance up to -1600MT/s when needed, claimed Micron. The 4Gb DDR3Lm product delivers the same optimized power efficiency, with a reduced chip count that is ideally suited for ultrathin and tablet customers, added the company.�Both 2Gb and 4Gb DDR3Lm will be adopted into Micron's 30nm class to optimize the power and performance features, with the 4Gb device hitting a 3.7mA IDD6�target in standby mode, yet still supporting speeds up to -1866MT/s, continued Micron.


DDR3Lm solutions boast less self-refresh power.

"Power reduction is becoming ever more critical in the fast growing ultrathin markets. Micron's expertise with traditional PC memory requirements enables these markets to enjoy high performance targets and optimal cost efficiencies," stated�Robert Feurle, VP for Micron's DRAM marketing. "The combination of our commitment to customer collaboration and dedication to leading the way in DRAM technologies has proven highly successful, and this new class of 30nm DRAM continues to deliver on that promise."

Sampling of Micron's DDR3Lm low-power product line begins now, with volume production on 30nm class devices expected to begin in 2Q12.

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