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Initiative updates e-beam roadmap

Posted: 15 Feb 2012 ?? ?Print Version ?Bookmark and Share

Keywords:electron beam? lithography? wafer processing? EUV?

eBeam Initiative has released an updated lithography roadmap that specifies ways to improve wafer yields at future 20nm and 14nm technology nodes.

The initiative is looking at improving mask accuracy and write times, as well as bend the mask cost curve for electron beam technologies.

At 28nm and below the 20nm logic node, mask features are typically smaller than 80nm in width, which makes mask accuracy and wafer yield increasingly difficult to maintain, according to statements from the initiative. As a result, mask critical dimension uniformity (CDU) has become a much more critical issue.

Electron-beam technologies such as mask process correction (MPC) and others are being guided by initiative members to facilitate a working ecosystem.

"Two of the greatest challenges for mask making starting at the 28-nm node and continuing down to the 20-nm node and beyond are accuracy and shot count," said Aki Fujimura, CEO of D2S Inc., managing company sponsor of the eBeam Initiative. "Mask makers must continually balance the need for accurate masks that result in high wafer yield with the long write-times and high costs of producing the complex masks that provide the needed accuracy."

The latest initiative statement mentions JEOL, an initiative member and e-beam lithography vendor, who is accepting customer orders with its technology that improves mask CDU. "Whether the semiconductor industry continues to push the limits of optical lithography for the foreseeable future or migrates to EUV lithography, improving mask accuracy will be essential to achieving high wafer quality," said Wataru Wakamiya, corporate officer and general manager of SE Business Unit, JEOL.

During 2012 and beyond, initiative members will collaborate on several proof points demonstrating the progress and readiness of e-beam technology.

- Nicolas Mokhoff
??EE Times

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