Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Amplifiers/Converters

Black Sand PAs picked for Murata 3G handset front-ends

Posted: 11 May 2012 ?? ?Print Version ?Bookmark and Share

Keywords:power amplifier? RF front end? CMOS?

Fabless semiconductor company Black Sand Technologies Inc.'s power amplifier (PA) technology has been chosen by Murata Manufacturing Co. Ltd for use in integrated RF front end products including 3G smartphones, tablets and datacards.

The PAs are expected to improve integration and increase performance of the front end products.This new agreement combines Murata's passive and Black Sand's CMOS PA technology to achieve the industry's best combination of performance and cost. Integrating the PA together with other RF front-end components into a single module allows for better optimization of performance, battery current, size, and cost. Black Sand was chosen to work with Murata due to its ability to cost-effectively implement demanding 3G PA specifications using standard silicon CMOS manufacturing technology.

Black Sand's PAs are said to improve the reliability and data throughput of 3G smart phones, tablets and datacards, while benefiting from the reliability and economies of scale derived from pure CMOS manufacturing. Mobile device manufacturers have long sought a viable CMOS alternative to GaAs that will enable them to benefit from an improved supply chain, higher reliability, and lower cost.

Article Comments - Black Sand PAs picked for Murata 3G ...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top