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New GaN process improves high voltage power device efficiency

Posted: 15 May 2012 ?? ?Print Version ?Bookmark and Share

Keywords:GaN? process technology? GaN 2 process?

RF Micro Devices Inc. has added to its portfolio of GaN process technology power devices with the introduction of the rGaN-HV high voltage process technology power devices targeting power conversion applications. The process is said to cut system cost and save energy in power conversion applications ranging from 1KW to 50KW, the company claimed.

The technology enables device breakdown voltage up to 900V, high peak current capability and ultra-fast switching times for GaN power switches and diodes. It complements the company's GaN 1 process, which is optimized for high power RF applications and delivers high breakdown voltage over 400V, and RFMD's GaN 2 process which is optimized for high linearity applications and delivers high breakdown voltage over 300V.

RFMD will manufacture discrete power device components for customers in its Greensboro, NC, wafer fabrication facility and provide access to rGaN-HV to foundry customers for their customized power device solutions.





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