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RF power MOSFET tips 92% efficiency in a half-bridge topology

Posted: 07 Jun 2012 ?? ?Print Version ?Bookmark and Share

Keywords:power MOSFET? RF gate drivers? RF power?

Microsemi Corp. has expanded its RF power product line with the introduction of the DRF1400 power MOSFET. It is well-suited for use in RF generators for a wide range of industrial, scientific and medical applications including plasma generation for semiconductors, LCD and solar cell manufacturing, and CO2 lasers operating up to 30MHz.

Microsemi's DRF family of products integrates RF gate drivers, power MOSFETs and associated bypass capacitors in a single highly thermal performance package. The DRF1400 is a half-bridge topology and it is the first device of its type in the company's DRF family to deliver efficiency of greater than 92 percent at 1kW, Microsemi said.

According to the company, the low parasitic capacitance and inductance, coupled with the Schmitt trigger input, Kelvin signal ground, anti-ring function, invert and non-invert select pin, provide improved stability and control in kW to multikilowatt, high frequency ISM applications. The high level of integration also allows the product to reduce BOM component counts and costs. Additional features include integrated RF drivers for simplified driver stage design, allowing simple logic signals at input; internal bypass capacitors for reduced parasitic inductance and most stable supply voltages; high breakdown voltage (500V) MOSFETs, enabling higher power output per half-bridge; and high thermal performance proprietary package capable of delivering up to 1.4 kW of power.

Engineering samples of the DRF1400 are available now. An associated DRF1400 reference design kit (13.56MHz, Class-D half bridge) is also available. This reference design includes all of the hardware needed to launch >1kW of RF power. A design guide is also available which covers the basics of operation and design consideration for RF system designers.





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