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Wideband PAs offer large instantaneous bandwidth

Posted: 11 Jun 2012 ?? ?Print Version ?Bookmark and Share

Keywords:power amplifier? GaN transistor? GaN HEMT Technology?

RFMD has introduced a wideband power amplifier designed for CW and pulsed applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the the RFHA1006 claims high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

The input-matched GaN transistor is packaged in an air cavity ceramic package for thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

The power amplifier features advanced GaN HEMT Technology; 9W output power; 225MHz to 1215MHz instantaneous bandwidth; internally matched input to 50; 28V operation typical performance; output power of 39.5dBm; 16dB gain; and claims 60 percent power added efficiency.

The device operates from -40C to 85C.

The device is suited for cass AB operation for public mobile radio; power amplifier stage for commercial wireless infrastructure; general purpose Tx amplification; test instrumentation; and

civilian and military radar.

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