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Power transistor ideal for radar architectures

Posted: 25 Jun 2012 ?? ?Print Version ?Bookmark and Share

Keywords:pulsed GaN RF? power transistor? power amplifier?

RF Micro Devices Inc. (RFMD) has launched the 280W RFHA1025 pulsed gallium nitride (GaN) RF matched power transistor. Operating at the 0.96GHz to 1.2GHz frequency range, the transistor delivers 280W pulsed power, >14dB of gain and >55 percent peak efficiency to improve radar architectures.

The device complements the company's 380W RF3928B S-Band device, as the company grows its portfolio of GaN-based power amplifier transistor products, including matched power transistors that claim to extend range, reduce size and weight, and improve overall ruggedness in new and existing radar architectures.

The RFHA1025 incorporates internal matching to simplify and shrink designers' circuits. It is packaged in a hermetic, flanged ceramic package, and is said to offer improved thermal stability and conductivity. RFMD's RF393x unmatched power transistors (UPT) can be used as drivers to the RFHA1025.

Samples and production quantities of the RFHA1025 are available now.





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