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MOSFET claim lowest on-resistance for n-channel devices

Posted: 05 Jul 2012 ?? ?Print Version ?Bookmark and Share

Keywords:SiA436DJ? MOSFET? TrenchFET?

Vishay Intertechnology Inc. has introduced a new Siliconix 8 V n-channel TrenchFET power MOSFET for load switching in portable electronics such as smartphones, tablet PCs and mobile computing applications.

Vishay claims its new SiA436DJ features the industry's lowest on-resistance for an n-channel device. The product is offered in a compact 2 x 2mm thermally enhanced PowerPAK SC-70 package.

It provides an ultra-low on-resistance of 9.4milliohms at 4.5V; 10.5milliohms at 2.5V; 12.5milliohms at 1.8V, 18milliohms at 1.5V and 36 milliohms at 1.2 V. These values are up to 18 percent lower than previous-generation solutions, according to Vishay.

The low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency.

The MOSFET's on-resistance ratings down to 1.2V simplify circuit design by allowing the MOSFET to work with the low-voltage power rails common in handheld devices, providing longer battery operation between charges. The SiA436DJ's low on-resistance also means a lower voltage drop across the load switch to prevent unwanted undervoltage lockout.

The SiA436DJ's 2 x 2mm footprint saves PCB space. The product is 100 percent Rg-tested, halogen-free in accordance with IEC 61249-2-21 and is RoHS-compliant.

Samples and production quantities of the new SiA436DJ TrenchFET power MOSFET are available now, with lead times of 12 weeks for larger orders.





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