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Verios SEM boasts precise measurements at 22nm or below

Posted: 01 Aug 2012 ?? ?Print Version ?Bookmark and Share

Keywords:scanning electron microscope? nanometer technology? semiconductors?

The Verios XHR scanning electron microscope (SEM) from FEI provides the sub-nanometer resolution and enhanced contrast needed for precise measurements on beam-sensitive materials in advanced semiconductor manufacturing and materials science applications.

It extends the lifetime of SEM as an important measurement tool in semiconductor process control labs by allowing engineers to measure beam-sensitive materials and structures that are too small for conventional SEM. When combined with FEI's IC3D software, Verios can provide the precise measurements needed to control processes at the 22nm technology node and below.

For materials scientists, Verios will enable important new insights by extending sub-nanometer imaging and characterization to novel materials being developed today. This will allow researchers to capture the high resolution, high contrast images required without the need to transition to TEM or other imaging techniques.

At low kV where the performance of conventional SEM degrades significantly, Verios system's advanced optics deliver sensitivity to surface detail. It allows any user to switch quickly between various operating conditions, maintain sample cleanliness, and obtain sub-nanometer resolution at any accelerating voltage from 1 kV to 30 kV.

Verios also introduces new detection technologies. The optimized signal collection and advanced filtering abilities provide higher and more flexible contrast generation. It also allows for a greater range of samples to be investigated.

Many beam-sensitive or non-conductive materials can now be accurately observed at the nanoscale, without any preparation.

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