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MOSFETs offer higher power density in SMPS designs

Posted: 22 Aug 2012 ?? ?Print Version ?Bookmark and Share

Keywords:SMPS? MOSFET? AC/DC power design?

Fairchild Semiconductor has expanded its PowerTrench MOSFET family with the roll out of power switches that combine a small gate charge, a small reverse recovery charge and a soft-reverse recovery body diode, allowing for fast switching speeds for switch-mode power supplies (SMPS) designs. According to the company, the devices deliver power density and light-load efficiency improvement for server, telecom and AC/DC power designers.

Available in a 40V, 60V and 80V rating, these devices require less power dissipation in the snubber circuitry due to an optimized soft-body diode that reduces voltage spikes by up to 15 percent over the competitor's solution, stated the company. Employing a shielded-gate silicon technology that provides charge balance, the devices achieve higher power density, low ringing and better light-load efficiency. By using this technology, the devices achieve a lower figure of merit while reducing driving loss to increase power efficiency, noted Fairchild.

The first devices available include the 40V FDMS015N04B and 80V FDMS039N08B available in a Power56 package, and the 60V FDP020N06B and 80V FDP027N08B available in a TO-220 3-lead package.

Available in 1,000 quantity pieces, the prices of FDMS015N04B, FDMS039N08B, FDP020N06B and FDP027N08B, are $1.78, $1.60, $4.50 and $3.30, respectively. Samples are available upon request with 8-12 weeks ARO.

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