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MOSFETs, diodes aimed at wireless charging

Posted: 07 Sep 2012 ?? ?Print Version ?Bookmark and Share

Keywords:Schottky barrier diode? MOSFET? wireless power transfer? tablet? notebook?

Toshiba America Electronic Components Inc. has rolled out a line of small signal middle power type Schottky barrier diodes (SBD) and dual N-channel MOSFETs for wireless power transfer applications in devices that include mobile phones, tablets, notebooks and digital still/video cameras. According to the company, the wireless power transfer applications require low ON-resistance and low forward voltage products for heat suppression in order to be suitable for battery drive deviceswhich require low power consumption.

Uses for Toshiba's MOSFETs and SBDs include backflow prevention in the 500mA USB charger line for mobile phones, contrary connection prevention for chargers, load-switching, low voltage rectification specification, bridge circuits, load switch circuits, power transmission stations for wireless power transfer, and wireless power transmission and receiving applications for mobile phones, tablet devices, notebooks, DSCs and DVCs.

The devices features low Rdson at 15.3m?, low VF (max) at 0.45V, 0.5V and 0.57V, and smaller package such as UDFN (2 x 2mm), SOT23F (2.8 x 2.9mm), ESC (1.6 x 0.8mm) and CST2B(1.2 x 0.8mm), detailed the company.

Toshiba's lineup of dual N-channel MOSFETs and SBDs is available now.

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