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1200V NPT IGBT boast reduced switching, conduction losses

Posted: 13 Sep 2012 ?? ?Print Version ?Bookmark and Share

Keywords:non-punch through? IGBT? arc welders? solar inverters? Schottky diodes?

Microsemi Corporation has announced the addition of APT85GR120B2, APT85GR120L and APT85GR120J transistors into its series of 1200V non-punch through (NPT) IGBTs. Based on Microsemi's advanced Power MOS 8 technology, the new transistors enable a significant reduction in switching and conduction losses. The devices are designed for high power, high performance switch mode products such as arc welders, solar inverters, and uninterruptible and switch mode power supplies.

Microsemi's FREDs or silicon carbide Schottky diodes can be used to package the 1200V NPT IGBTs to provide engineers with a highly integrated solution that allows them to streamline product development efforts. The APT85GR120B2 transistor is offered in a TO-247 MAX package, the APT85GR120L is packaged in a TO-264 and the APT85GR120J is packaged in a SOT-227.

The new transistors feature faster switching due to a significantly lower gate charge (Qg), efficient power conversion enabled by hard switching operation greater than 80kHz, are easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high power applications and are also Short Circuit Withstand Time Rated (SCWT) for reliable operation in applications requiring short circuit capability.

Microsemi will also be soon launching an APT85GR120JD60 device that has a 60A anti-parallel, ultrafast recovery diode built with Microsemi's proprietary "DQ" generation of low switching loss, avalanche energy rated diode technology and packaged in in a SOT-227.





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