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TI's latest gate driver 40 per cent faster than peers

Posted: 03 Oct 2012 ?? ?Print Version ?Bookmark and Share

Keywords:IGBTs? MOSFETs? optical gate drivers? electro-magnetic interference?

Texas Instruments Inc. has recently announced an isolated gate driver for insulated-gate bipolar transistors (IGBTs) and MOSFETs which are 40 per cent faster than equivalent optical gate drivers.

The ISO5500's input TTL logic and output power stage are separated by a capacitive, silicon dioxide (SiO2) isolation barrier that doubles the lifetime of the device compared to optocouplers and magnetic isolators. When paired with isolated power supplies, the device has been touted by TI as safer, more reliable by blocking high voltages, isolating ground and preventing noise currents from entering local ground and interfering with or damaging sensitive circuitry.

The ISO5500 provides over-current protection, while an under-voltage lockout circuit monitors the output power supply to ensure sufficient gate drive voltage in motor control, motion control, and industrial inverter and switch-mode power supply applications. If the output supply drops below 12 V, the gate driver outputs transitions to a logic-low state, turning off the power transistor. This prevents the device from overheating and damage. The new gate driver is qualified for operating at extended temperatures from C40C to +125C.

To provide secondary power supply to the ISO5500, the SN6501 transformer driver can be used in conjunction with a transformer, rectifier and a regulator. The result is a small, low-cost, high-efficiency and low electro-magnetic interference (EMI) solution for generating the isolated power to the system.

The ISO5500 is available in a 10.3-mm by 10.3-mm, 16-pin SOIC package. Suggested retail pricing in 1,000-unit quantities is US$3.00.





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