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Infineon expands 3rd gen RC conducting IGBT portfolio

Posted: 19 Oct 2012 ?? ?Print Version ?Bookmark and Share

Keywords:Reverse Conducting? Insulated Gate Bipolar Transistor? 1200V? 1350V? EMI behaviour?

Infineon Technologies has recently introduced 1200V and 1350V devices, expanding the company's portfolio for the 3rd generation Reverse Conducting (RC) Soft Switching Insulated Gate Bipolar Transistor (IGBT).

The company possesses a strong record in resonant switching IGBT technologies well-suited for induction cooking applications. The 3rd generation of IGBT has been optimised for lower switching and conduction losses and aims to provide efficiency in 1100V, 1200V and 1350V.

The new generation provides more than 20 per cent lower switching losses resulting in a 5K case temperature reduction during application tests in comparison to the 2nd generation RC IGBT from Infineon. Lower switching losses reduce the thermal stress on the device and lead to longer lifetime and higher reliability. High efficiency, excellent thermal performance and EMI behaviour, due to soft switching operation, make it the best suited IGBT on the market for induction cooking, solar and other resonant switching applications.

The portfolio extension of 30A and 40A in 1350V addresses the need of designers to have devices with higher breakthrough voltage and current withstand capabilities, which allow for the development of higher power rated designs in single-end topologies, for example up to 3.6kW.

Additionally, the 30A and 40A devices with 1350V breakthrough voltage enable the extension of the safe operating area (SOA) and higher over-current rating during surge conditions, which gives designers enhanced robustness and reliability.

All 3rd generation Reverse Conducting IGBT are designed to operate with junction temperatures up to 175C. Saturation voltage V CE(sat) value ranges from 1.80V to 2.10V for a 15A 1200V device and 40A with a 1350V device respectively at T j=175C. Low turn-off soft switching losses ensure highly efficient operation C from 0.15mJ with 15A 1200V IGBT to 1.07mJ for a 40A 1350V device at dv/dt=150.0V/?s and T j=175C.

3rd generation Reverse Conducting IGBT portfolio is available in 15A, 20A, 30A and 40A current class with 1200V and 1350V breakthrough voltages, as well as 1100V in 30A current class. Devices are available immediately in high production volumes.

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