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1.2kV IGBT tech boasts ruggedness for industrial apps

Posted: 20 Nov 2012 ?? ?Print Version ?Bookmark and Share

Keywords:IGBT? energy saving application? Gen8?

International Rectifier (IR) has announced its new generation insulated gate bipolar transistor (IGBT) technology platform. According to the company, the Generation 8 (Gen8) 1.2kV IGBT platform uses the company's latest generation trench gate field stop technology that promises best-in-class performance for industrial and energy saving applications.

The Gen8 design allows best-in-class Vce(on) to reduce power dissipation and increase power density, and delivers superior robustness, added the company.

The technology offers softer turn-off characteristics geared for motor drive applications, minimising dv/dt to reduce EMI and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs in high-current power modules. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175C, flaunted IR.

IR's Gen8 1.2kV IGBT platform is being sampled to major OEM and ODM partners at this time.

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