Fujitsu hits 2.5kW servers' GaN power supply units

Fujitsu Semiconductor Asia Pte Ltd has revealed that it has reached 2.5kW output power in server power supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. According to the company, the devices will enable it to propose their use in a various value-enhancing power supply applications, significantly contributing to the realisation of a low-carbon society.

Fujitsu indicated that GaN-based power devices feature characteristics such as lower on-resistance and the ability to perform high-frequency operations, leading to more compact and efficient power supply units. Fujitsu is aiming to commercialise GaN power devices on a silicon substrate which, with increases in the diameters of silicon wafers, enables low-cost production.

Fujitsu has recently completed setting up a mass-production line for 6in wafers at its Aizu-Wakamatsu plant, and will begin full-scale production of GaN power devices in 2H13. Moving forward, by offering GaN power devices optimised for customer applications and technology support for circuit designs, Fujitsu will support the development of low-loss, highly-compact power supply units suited to a wide range of uses.