P-channel MOSFET touts 4.8m? at 4.5V gate drive

Vishay Intertechnology Inc. has announced what it boasts as the industry's first -20V p-channel MOSFET in a 3.3 x 3.3mm package delivering on-resistance of 4.8m? maximum at 4.5V gate drive. The Si7655DN is the first device to be released in a new version of the Vishay Siliconix PowerPAK 1212 package that enables lower-RDS(on) devices while providing a 28 per cent slimmer nominal profile of 0.75mm and maintaining the same PCB land pattern, added the company.

Applications for the Si7655DN include load switching and hot swapping in industrial systems; adaptor, battery and load switches in charger circuits; and power management for smartphones, tablets and other mobile computing devices. The device can also be used for redundancy switch, OR-ing and supervisory applications in fixed telecom, cell phone base station and server/computer systems.

Using the PowerPAK 1212 package version and Vishay Siliconix's p-channel Gen III technology, the Si7655DN claims to provide industry-low maximum on-resistance of 3.6m? (-10V), 4.8m? (-4.5V) and 8.5m? (-2.5V). These specifications represent an improvement of 17 per cent or better over the next best competing -20V devices, indicated Vishay.

The low on-resistance of the Si7655DN will allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.

Samples and production quantities of the Si7655DN are available with lead times of 12 to 14 weeks for larger orders.

The Si7655DN's datasheet can be found here.