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FDSOI workshop reveals next nodes at 14nm, 10nm

Posted: 14 Dec 2012 ?? ?Print Version ?Bookmark and Share

Keywords:FDSOI? FinFET? 20nm node? 14nm node? roadmap?

At a recent workshop for fully depleted silicon insulators (FDSOI) in San Francisco, documents showed that the FDSOI roadmap now omits 20nm and goes straight to 14nm and then on to 10nm.

A summary slide from Horacio Mendez, executive director of the SOI Consortium, showed the jump with the comment that 14nm FDSOI would be offered at the same time as Intel's 14nm FinFET and would show the same performance characteristics but realisable at much lower cost.

A presentation by Joel Hartmann, executive vice president of front-end process for STMicroelectronics, at the same meeting, organised by the SOI Consortium, also shows the move from 28nm FDSOI, a process that is has started to ship in the second-half of 2012, on to 14nm FDSOI and then 10nm FDSOI.

Previously ST has spoken of the 28nm FDSOI process prototyping in July 2012 followed by a 20nm FDSOI process prototyping in 3Q13. (see ST's FDSOIs ready to roll out)

The implication is that parties interested in the FDSOI roadmap are renaming what was the 20nm node so they can be seen to be at an equivalent node to Intel 14nm FinFET process and FinFET processes from foundries such as Taiwan Semiconductor Manufacturing Co. Ltd. and Globalfoundries.

Hartmann's presentation provided the most recent results measured for the 28nm FDSOI process made with multi-core ModAp NovaThor processor from ST-Ericsson and made extensive claims for the superiority of 28-nm ST's gate-first FDSOI manufacturing process in comparison with 28-nm bulk CMOS process in terms of ease of manufacture lower power consumption and higher performance.

Mendez shows the FDSOI roadmap now includes a 10nm process to be offered in 2016, which will also be the point at which the FDSOI roadmap would introduce the option of FinFET over SOI.

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Figure 1: Fully depleted vision for SoCs through 10-nm. Source: SOI Consortium.

- Peter Clarke
??EE Times

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