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SuperFET II boasts low on-resistance, lower gate charge

Posted: 26 Dec 2012 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFETS? SuperFET II? FOM? gate resistor? Eoss?

Fairchild Semiconductor has recently debut its 600V N-channel SuperFET II MOSFET series. The company's latest offering caters to servers, telecom, computing and industrial power applications that require high power density. It provides designers with a cost effective solution which takes up less board space while also improving reliability.

Offered in two product families, the SuperFET II and SuperFET II Easy Drive, these MOSFETs offer a smaller stored energy in output capacitance (Eoss) for higher efficiency in light-load conditions and best-in-class robust body diode for increased system reliability in resonant converters.

Utilising an advanced charge balance technology, these MOSFETs provide a significantly low on-resistance and a lower gate charge (Qg) performance for a lower figure of merit (FOM). The devices are comprised of several integrated features to assist in a simplified design that reduces component count for a more efficient, cost-effective design including a gate resistor (Rg) that greatly reduces gate oscillation and improves overall system performance.





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