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SMM imaging of dopant structures of semiconductors

Posted: 17 Jan 2013 ?? ?Print Version ?Bookmark and Share

Keywords:SMM? VNA? impedance measurement? RF performance?

SMM has been engineered to leverage the accuracy and flexibility of a VNA for impedance measurement, particularly for quantitative capacitance measurement on a dielectric sample. Furthermore, it can be engineered to measure differential capacitance (dC/dV) by applying a low-frequency (RF) modulation signal to the MW measuring signal. The device for dC/dV measurement is called the dopant profile measurement module (DPMM) that can be attached to Agilent VNA instruments. The SMM system from Agilent consists of a standard AFM unit and a VNA unit (the PNA series). It also includes a DPMM module and a lock-in amplifier for dC/dV measurement. The components of a typical SMM system are schematically illustrated in this document. It can be used to perform capacitance and dC/dV imaging simultaneously.

The MW signal from the VNA is divided into two parts within the DPMM. The first part is amplified and used as the local oscillator signal (LO) for the dC/dV mixer. The second part is amplified and sent through the main arm of the coupler to the AFM probe tip, where a RF signal is also applied to the tip from an external source, e.g., a function generator such as that of the MAC Mode III controller on the Agilent AFM.

View the PDF document for more information.

Originally published by Agilent Technologies at www.agilent.com as "SMM Imaging of Dopant Structures of Semiconductor Devices".





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