Power MOSFETs boast 20m? on-resistance

The power MOSFETs are geared for battery or load switching in power management applications for portable electronics such as smartphones, tablets and mobile computing devices. The devices' compact outlines save PCB space and provide ultra-thin profiles to enable slimmer and lighter portable electronics, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges, said the company. The low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.

For applications where low on-resistance is more critical than space, the 8V n-channel Si8424CDB and -20V p-channel Si8425DB offer maximum on-resistance of 20m? and 23m?, respectively, at a 4.5V gate drive. The devices are offered in the 1.6 x 1.6 x 0.6mm CSP package. With 43m? maximum on-resistance at 4.5V, the smaller 1 x 1 x 0.55mm Si8466EDB 8V n-channel MOSFET will be used for applications where space is even more critical than on-resistance. The Si8466EDB also provides 3kV typical ESD protection.

The Si8466EDB and Si8424CDB offer on-resistance ratings down to 1.2V, allowing the devices to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry. All devices are compliant to RoHS Directive 2011/65/EU and halogen-free according to the JEDEC JS709A definition.

Samples and production quantities of the new TrenchFET power MOSFET are available with lead times of 12-14 weeks for larger orders.