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IXYS boasts rectifier diode with record power density

Posted: 17 Jan 2013 ?? ?Print Version ?Bookmark and Share

Keywords:rectifier diodes? bonded-wafer level construction? high power density? Chemical power supplies?

Power IC manufacturer IXYS Corporation has recently unveiled a new range of 83mm diameter die rectifier diodes. The new 2.2kV rectifier has a current rating of 15,450A and represents a new technology platform for bonded-wafer level construction with a favorable high power density.

"The thermal capacity of the metal disc and its direct fusion to the silicon enhances performance and gives excellent transient thermal and surge current ratings.The new package design, which retains an industry standard footprint, allows for the maximum silicon to package ratio and represents a 46 percent increase in current density over older designs in a similar package outline. It is an extension of our proven 83mm Si technology that we introduced recently for our high performance 2.8kV and 4.5kV Phase Control Thyristors," commented Frank Wakeman, Marketing and Technical Support Manager for IXYS UK.

The 2.2kV rectifier diode has an average current rating (Case temperature 55C) of 8,570A and surge current rating of 78,000A, with a junction to heat sink thermal resistance of 0.008 K/W.

The device is available in an industry standard 26mm thick package and two voltage grades. Designations: W8570TJ180 (1800V) and W8570TJ220 (2200V). Additional products with voltage ratings up to 6kV will be launched through 2013 as well as a 36mm thicker package option.

Typical applications for these devices include: Track side rectifiers, Chemical power supplies, Industrial rectifiers and all rectifier applications requiring very high powers.

More information is available at

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