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TriQuint outs 35W, 32V GaN RF power transistors

Posted: 18 Jan 2013 ?? ?Print Version ?Bookmark and Share

Keywords:RF power transistors? GaN on SiC? thermal management?

TriQuint Semiconductor Inc. has revealed a couple of 35W, 32V GaN on SiC RF power transistors from TriQuint that according to the company deliver optimised power and efficiency, and can cut overall system costs. The T1G4003532-FL and T1G4003532-FS are 37W (P3dB) discrete GaN on SiC HEMTs that operate from DC to 3.5GHz, noted the company.

GaN on SiC RF power transistors

GaN on SiC RF power transistorsDevices operate from DC to 3.5GHz.

The devices are constructed with TriQuint's 0.25m process, which features advanced field plate techniques to optimise power and efficiency at high drain bias operating conditions, described the firm. This optimisation can potentially lower system costs by decreasing the number of amplifier line-ups needed and lowering thermal management costs.

The transistors operate at 32V, offer high compressed gain and greater than 33W of compressed output power, and may be used as a driver or final stage. The T1G4003532-FL is offered in a bolt down flanged package while the T1G4003532-FS is in a solder down earless package. Both are geared for commercial and military radar, professional and military radio communications systems, test instrumentation, jammers, and wideband or narrowband amplifiers.

The devices are in stock and available for immediate delivery.





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