Renesas' new MOSFETS boast 50% lower On-resistance

Featuring a low on-state resistance of 0.72M? (typical value) for 30 V – about 50 per cent lower resistance compared to Renesas' earlier products – and a high-efficiency, small surface mount package (8-pin HVSON), the new products enable high-current control in a smaller package contributing to power savings and miniaturisation of the power units used for comparably large scale server storage systems.

For mission-critical systems, it is common to provide redundant power delivery, i.e., by ORing FET with multiple power units that maintain high reliability for the server storages systems. These ORing FETs are connected to the power output lines of each of the power supply units. They remain in the on-state during normal operation, but if one of the power supply units fails, the ORing FETs of that unit switch to the off-state in order to isolate them from the other power supply units and ensure that the failed unit does not disrupt system power.

During normal operation, the power output lines handle large currents of several tens to several hundreds of amperes. The ORing FETs must have low on-state resistance characteristics to prevent an increase in conduction loss or a drop in the power supply voltage. In response to this need, Renesas has developed a trio of MOSFETs based on the company's new low on-state resistance process. The new?PA2764T1A,?PA2765T1A and?PA2766T1A meet this need, offering industry-leading low on-resistance in power supply devices in smaller form factors.

Samples of the new low on-state resistance power MOSFET products are available now. Sample pricing will vary. The sample price for the?PA2764T1A will be US$1.20 per unit,?PA2765T1A will be US$1.00 and?PA2766T1A will be US$1.80.