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Gate drivers target IGBT, SiC FET designs

Posted: 05 Mar 2013 ?? ?Print Version ?Bookmark and Share

Keywords:IGBT? SiC FET? MOSFET?

Texas Instruments Inc. has announced what it touts as the industry's first 35V, single-channel, output stage power management gate drivers for insulated-gate bipolar transistors (IGBTs) and silicon carbide (SiC) FETs. The UCC27531 and UCC27532 output stage gate drivers with split output claim to offer the most efficient output drive capability, shortest propagation delay and increased system protection for isolated power designs such as solar DC/AC inverters, uninterruptible power supplies and electric vehicle charging, stated TI.

The UCC27531 and UCC27532 prevent the digital controllers from operating too close to the power circuitry, extending the lifetime of isolated power designs. The devices feature peak current of 2.5A source and 5A sink that allows fast charging of IGBTs and ensures reliable and efficient operation, and 17ns typical delay that promises driver efficiency. In addition, the UVLO settings and rail-to-rail output voltage provide system protection. TI added that the devices' negative input voltage handling allows the driver to support many industrial designs. Lastly, their split-output configuration improves Miller turn-on immunity and prevents damage of IGBT/MOSFET.

The UCC27531 and UCC27532 gate drivers are available in a 6-pin, SOT-23 package and are priced at $0.75 in quantities of 1,000. The UCC27531EVM-184 IGBT driver daughter card evaluation module is priced at $49 and available for ordering through TI's eStore. In addition, a PSpice model and application note 35V single-channel gate drivers for IGBTs help speed design time.





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