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Fujitsu uncloaks 1Mb, 2Mb FRAM devices

Posted: 26 Mar 2013 ?? ?Print Version ?Bookmark and Share

Keywords:FRAM? smart meter? industrial machinery?

Fujitsu Semiconductor America has unveiled a couple of FRAM products featuring 1Mb and 2Mb of memory. The MB85RS1MT and MB85RS2MT, the largest-capacity, serial-interface FRAM products offered by Fujitsu, offer features that are geared for smart meters, industrial machinery and medical devices including high endurance, higher writing speed, larger density and low power consumption, indicated the company.

The FRAMs can support 10 trillion writing cycles, an endurance roughly 10 times greater than previous ferroelectric memories from Fujitsu and superior to other nonvolatile memories by at least a million times, the firm boasted. Memory devices using FRAM consume 92 per cent less power during writing compared to identical-capacity EEPROMs, and feature a writing speed 920 times faster.

As a single-chip solution, the FRAM products substantially cut component costs, mounted area and power consumption compared to other system memory solutions that use EEPROM or SRAM and a battery for data retention, added Fujitsu. The FRAM devices, by eliminating the need for a battery and additional memory components, promise to simplify the design process, save board space and reduce maintenance costs.

The MB85RS1MT (1Mb) and MB85RS2MT (2Mb) will be available in sample quantities at the end of March and will also be available as bare die for use in tiny medical and consumer devices.





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