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High-speed diode series reduces 30% RON-A

Posted: 08 Apr 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Toshiba? MOSFET? high-speed diodes? power supplies? photovoltaic?

Toshiba Corporation has recently rolled out its latest line of high-speed diodes which are based on the 4th generation 600V system super junction MOSFET "DTMOS IV" series. The company's latest product is designed for switching power supplies, micro inverters, adaptors and photovoltaic inverters.

The new series uses the latest single epitaxial process and has a reduced On-resistance per area(RON-A) by approximately 30 per cent compared to existing products. High-speed parasitic diodes achieve a reverse recovery time of approximately one-third that of existing products, reducing loss and contributing to improved power efficiency.

The MOSFET "DTMOS IV" features the use of the single epitaxial process secures small increases in ON-resistance and reverse recovery times at high temperatures. It also has a wide line-up for ON-resistance (0.65 to 0.074) as well as a wide line-up of packages.

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