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Samsung outs 128Gbit flash under 20nm

Posted: 15 Apr 2013 ?? ?Print Version ?Bookmark and Share

Keywords:NAND flash? DDR? solid-state drives?

South Korea's Samsung Electronics announced it has begun volume production of a 128Gbit, 3bit multi-level cell NAND memory using 10-nm class process technology. Samsung defines 10-nm class to be somewhere between 10nm and 19nm.

Samsung claims its chip has the highest physical density and the highest performance as it can move data at 400Mbit/s using a toggle DDR 2.0 interface. Micron Technology recently announced a 128Gbit 3bit MLC NAND flash memory made using a 20nm manufacturing process (see Micron to put flash, DRAM on DDR4 bus). Samsung started production of 1Xnm 64Gbit MLC NAND flash memory in November 2012.

No details of the read or write performance, or the cycling endurance were provided by Samsung in a press release nor did the company provide a part number.

Samsung said it would use the 128Gbit NAND flash memory to expand its supply of 128GB memory cards and to increase its production of solid-state drives with densities above 500GB for use in computers.

"The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market," said Young-Hyun Jun, an executive vice president of memory sales & marketing at Samsung, in a statement.

- Peter Clarke
??EE Times

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