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SiGe transceivers target mm wave wireless backhaul

Posted: 18 Apr 2013 ?? ?Print Version ?Bookmark and Share

Keywords:wireless backhaul? transceivers? base stations?

Infineon Technologies has unleashed a portfolio of transceivers that the company said simplifies system design and production logistics by replacing more than 10 discrete devices. Thanks to the devices' low power consumption, the single-chip high-integration transceivers also help to cut fixed expenses in high data rate millimeter wave wireless backhaul communication systems, stated the firm.

Aimed at the market for wireless data links with data rates of more than 1Gb/s between LTE/4G base stations and core networks, the devices in the Infineon BGTx0 product family come in a standard plastic package. The customers' assembly process is simplified dramatically as they can continue to use a standard SMT assembly flow, noted Infineon.

The BGTx0 family touts a complete RF front-end for wireless communication in 57-64GHz, 71-76GHz, or 81-86GHz millimeter wave bands. Paired with a baseband/modem, the system solution requires less space, offers improved reliability and lower cost for the critical wireless backhaul links needed in mobile base stations that support LTE/4G networks.

The BGTx0 transceivers integrate all of the RF building blocks, I/Q modulator, voltage controlled oscillator (VCO), power amplifier (PA), low noise amplifier (LNA), programmable gain amplifier (PGA), SPI control interface and more, on a single chip in a compact, plastic eWLB package. Validation and calibration of RF performance occurs in production using built-in-self-test (BIST), which contributes to the simplicity of integrating the chip into a device builder's production flow.

The outstanding RF performance of SiGe technology, such as deliverable output power of up to 18dBm of PA, extreme low noise figure of 6dB of LNA and VCO phase noise better than -85dBc/Hz at 100kHz offset, allows a system designer to implement high modulation schemes up to QAM64 with a sample rate of 500Msps and QAM32 with 1Gsps at a 10-6 BER, detailed the firm. ESD performance of more than 1kV increases the robustness and eases the system design for customers. The low power consumption of less than 2W for this backhaul transceiver family also allows network operators to reduce related fixed expenses. Due to the direct conversion architecture of the transceiver, the interface between RF and baseband is simplified significantly compared to currently available discrete millimeter wave systems, continued Infineon.

System suppliers also benefit from the quality and reliability of Infineon's automotive qualified production flow for SiGe ICs.





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