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MOSIS joins push for silicon photonics tech

Posted: 06 May 2013 ?? ?Print Version ?Bookmark and Share

Keywords:silicon photonics? optical lithography? packaging?

MOSIS, a provider of low-cost prototyping and small volume production services for custom ICs, has partnered with ePIXfab, the European Silicon Photonics support centre that offers low-cost prototyping services for photonic ICs. According to the company, the venture gives MOSIS' customers access to Imec's modern fully integrated silicon photonics processes and Tyndall's advanced silicon photonics packaging technology.

Imec's silicon photonics platform claims to enable cost-effective R&D of silicon photonic ICs for high-performance optical transceivers (25Gb/s and beyond) for telecom, datacom and optical sensing for life science applications. The integrated components include low-loss waveguides, efficient grating couplers, high-speed silicon electro-optic modulators and high-speed germanium waveguide photo-detectors. A comprehensive design kit to access Imec technologies will be provided, added the firm. Moreover, the Tyndall National Institute, being a partner of ePIXfab, offers the ability to provide packaged silicon photonics devices. This includes the design and fabrication of custom photonic packages, fibre coupling (single and arrays) and electrical interconnects.

Companies can benefit from Imec silicon photonics capability through established standard cells, or explore the functionality of their own designs in MultiProject Wafer runs," stated Philippe Absil, programme director at Imec.

Packaged passive silicon photonics chip

Packaged passive silicon photonics chip. Imec, silicon photonic chip; Tyndall, fibre array packaging.

Imec's Si photonics 200mm wafer platform claims to offer extensive design flexibility and includes tight within-wafer silicon thickness variation 3sigma optical lithography), poly-Si overlay and patterning (193nm optical lithography), 3-level n-type implants and 3-level p-type implants in Si. It also features Ge epitaxial growth on Si and p-type and n-type implants in Ge, local NiSi contacts, Tungsten vias and Cu metal interconnects, Al bond pads, and validated cell library with fibre couplers, polarisation rotators, highly efficient carrier depletion modulators and ultra-compact Ge waveguide photo-detectors with low dark current.

The first ePIXfab-Europractice run for passive silicon photonics ICs is open for registration from June 2013 with design deadline September 9th 2013. MOSIS' customers can register for this run and obtain the design kit via MOSIS in June 2013.

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