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650V power chip runs super junction MOSFET

Posted: 08 May 2013 ?? ?Print Version ?Bookmark and Share

Keywords:super junction MOSFET? UPS? components?

Infineon Technologies has recently expanded its high voltage portfolio with the introduction of the CoolMOS C7, a new 650V super junction MOSFET technology.

The new C7 product family provides Best-in-Class R DS(on) for all standard packages and efficiency improvements over the full load range. It is optimised for hard switching topologies such as Continuous Conduction Mode Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost. Typical applications are solar, server, telecom and uninterruptible power supply (UPS). The 650V breakdown voltage also makes C7 suitable for applications which require extra safety margin.

The C7 series offers the world's lowest R DS(on) of 19m? in a TO-247 package and 45m? in the TO-220 and D 2PAK packages. The fast switching performance of C7 now enables customers for the first time to operate at switching frequencies greater than 100kHz whilst achieving Titanium levels of efficiency in Server PFC stages. This enables higher power density by reducing the space requirements for the passive components.

Furthermore, reduced energy in the output capacitance (E OSS) as well as the low gate charge (Qg) brings efficiency benefits also at light load conditions. Combining the Best-in-Class performance of C7 with Infineon's new Silicon Carbide (SiC) thinQ! Generation 5 Schottky Diode series and the ICE2 / ICE3 Control ICs offers designers unrivaled performance for CCM PFC circuits.

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