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1200V, 80Milliohm Silicon Carbide MOSFET

Posted: 09 May 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Cree? Richardson RFPD? SiC? MOSFET?

Richardson RFPD has recently announced the availability of Cree Inc.'s latest Silicon Carbide (SiC) power MOSFET. The second-generation SiC Z-FET 1200V MOSFET C2M0080120D delivers industry-leading power density and switching efficiency, at half the cost-per-amp of Cree's previous-generation MOSFETs.

At this price-to-performance point, the new device lowers system costs for OEMs and provides additional savings to the end-user through increased efficiency and lower installation costs, due to the lower size and weight of SiC-based systems.

Additional key features of the C2M0080120D include:

  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Resistant to latch-up
  • Easy to parallel and simple to drive
  • TO-247-3 package
  • Further information on the C2M0080120D can be found here.





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