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GaN in plastic transistor boasts breakthrough power density

Posted: 17 May 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Macom? GaN?

Macom Technology Solutions has recently introduced a series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems.

The first entries in Macom's GaN in Plastic power transistor product portfolio include 90W, 50W and 15W transistors. The devices can be mounted on PCBs via ground/thermal arrays. Internal stress buffers allow the devices to be reliably operated at up to 200C channel temperature. The GaN in Plastic series also includes a 5W device in an even smaller SOT-89 package, measuring 2.5x4.5mm. All of these transistors are capable of operating at frequencies up to at least 3.5GHz.

Packaged in miniature 3x6 mm dual-flat no leads (DFN) and standard small outline transistor (SOT-89) packages, the GaN in Plastic transistors operate at 50V drain bias. The high voltage operation also benefits overall system design with smaller energy storage capacitors and lower current draw. The power transistors leverage sophisticated thermal management techniques to ensure excellent reliability in surface mount applications.

The 90W power transistor demonstrates less than 115C junction temperature (80C base-plate) for a pulsed power output of 93W, using a 1mS pulse and 10 per cent duty cycle on standard Rogers board material. The devices can operate at even higher temperatures, as the calculated mean-time-to-failure (MTTF) at 200C is roughly 600 years.

GaN in Plastic test fixtures are available upon request. Datasheets and additional product information can be obtained from MACOM's GaN microsite.

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