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TO-leadless package ready for 300A high current apps

Posted: 20 May 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Infineon? TO-Leadless? MOSFET?

Infineon has recently unveiled a TO-Leadless package. The package contains the latest OptiMOS MOSFET generation for applications with high power and reliability requirements such as forklift, light electric vehicles, eFuse, PoL (Point of Load) and telecom systems.

The new TO-Leadless package has been designed for high currents up to 300A. Due to its low package resistance, it enables a low RDS(on) in all voltage classes. The device also shows a substantial reduction in footprint of 30 per cent and requires less board space. The 50 per cent reduced height offers a significant advantage in compact applications such as rack or blade servers. Moreover, low package parasitic inductance results in an improved EMI behavior.

The TO-Leadless comes with a 50 per cent bigger solder contact area which leads to lower current density. This avoids electro migration at high current levels and temperatures, and results in improved reliability. The devices also offers an optical inspection due to tin plated grooved leads.

The new package is the best choice for high power applications where highest efficiency, superior reliability, best EMI behavior as well as best thermal behavior are required.

Samples of TO-Leadless are available now in 30V (0.4M? max.), 60V (0.75M? max.), 100V (2.0M? max.) and 150V (5.9M? max.).

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