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GCS unveils two InGaP HBT foundry processes

Posted: 28 May 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Global Communication Semiconductors? wafer? foundry? processes? VCO?

Global Communication Semiconductors (GCS), a pure-play III-V compound semiconductor wafer foundry has recently announced that its proprietary InGaP HBT D5 and P7 foundry processes will now be offered to address the wide tuning range VCO and the 12V PA requirements.

Brian Ann, CEO of GCS, stated that in addition to maintaining the super low phase noise performance offered by the company's D1 VCO process, the D5 InGaP HBT process offers an advantage of a wider (2x) frequency tuning range.

The P7 InGaP HBT process, with a BVceo of 28v, was developed to address the small cell base station infrastructure PA requirement of 12V operation. The process can be used to develop linear PA with an output power of 1, 2, 4, 8, 10W, etc. As an example, a 2W PA has demonstrated a power density of 0.917mW/um2 with a power added efficiency of > 65 per cent. These two new processes expand our InGaP HBT process portfolio to a total of seven processes which are sufficient to address any wireless infrastructure PA and VCO requirements

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