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SanDisk announces sampling of 1Ynm process tech

Posted: 29 May 2013 ?? ?Print Version ?Bookmark and Share

Keywords:1Ynm? flash memory? All-Bit-Line? NAND? SSD?

SanDisk Corp. has begun customer sampling of flash memory products based on its 1Ynm process technology, which represents its second generation 19nm manufacturing technology. According to the company, this breakthrough in semiconductor manufacturing takes its memory cell size from 19 x 26nm to 19 x 19.5nm, delivering a 25 per cent reduction of the memory cell area and allowing SanDisk to build smaller, more powerful flash memory products.

SanDisk added that its second-generation 19nm memory die uses the most sophisticated flash memory technology node to-date, including advanced process innovations and cell-design solutions. SanDisk's All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. In addition, SanDisk's three bits per cell X3 technology, implemented in the second-generation 19nm node will deliver the lowest-cost flash solutions to address multiple growing end-markets for flash memory, boasted the firm.

The technology also allows higher capacity products and lower cost manufacturing techniques to be employed when creating SanDisk's flash memory solutions. Consumers and businesses worldwide will benefit from this advanced manufacturing technology by having access to higher capacity and smaller-sized flash memory chips from SanDisk for mobile phones, tablets, solid state drives (SSDs) for client and enterprise markets and consumer products.

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