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48V HEMT device ready for defence market

Posted: 06 Jun 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Nitronex? Gallium nitride? HEMT? commercial?

Gallium nitride (GaN) solutions provider Nitronex recently completed development on its latest line of High-electron-mobility transistor (HEMT) devices for defence and commercial markets. The NPT2000 series is based on a new 48V GaN-on-Silicon process technology and supports power levels of 12, 25, 50 and 100 Watts, and are available in both plastic and ceramic packages.

The development of the NPT2000 Series 48V discrete HEMT product family is the culmination of three significant efforts: an Iterative design improvements based on our 28V product line enhancing ruggedness, thermal performance b and breakdown voltage, and expanded product offering by including low cost, easy to use plastic packages for all devices, from the lowest to highest power and extensive reliability testing qualifying the new 48V operating voltage.

The new family of products includes the NPT2010 and NPT2020 with 100W and 50W of output power respectively, in an AC360 ceramic package, the NPT2018 and NPT2019 housed in a 3x6 DFN plastic package with output powers of 12W and 25W, and the NPT2021 (50W) and NPT2022 (100W) in the industry-standard TO272 plastic package.

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